Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region
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DOI: 10.1016/j.optmat.2018.09.017
Abstract: Abstract InGaN based LEDs with V-pits structure and consists of n-GaN, In0.1Ga0.9N/GaN superlattices (SLs), In0.15Ga0.85N blue quantum wells (BQWs), In0.25Ga0.75N green quantum wells (GQWs) and p-GaN were grown on Si substrate. Carrier transportation is studied… read more here.
Keywords: leds pits; ingan based; carrier transportation; pits structure ... See more keywords