Improved Planar InAs Avalanche Photodiodes With Reduced Dark Current and Increased Responsivity
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DOI: 10.1109/jlt.2019.2905535
Abstract: Indium Arsenide (InAs) infrared photodiodes provide high quantum efficiency in the wavelength range of 1.0–3.0 μm. Planar diode configuration has been adopted to reduce surface leakage. In this work, new fabrication procedures for planar InAs… read more here.
Keywords: dark current; avalanche photodiodes; inas avalanche; planar inas ... See more keywords