Influencing Sources for Dark Current Transport and Avalanche Mechanisms in Planar and Mesa HgCdTe p-i-n Electron-Avalanche Photodiodes
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DOI: 10.1109/ted.2017.2783352
Abstract: In this paper, both planar and mesa homojunction p-i-n HgCdTe electron-avalanche photodiodes (e-APDs) are fabricated and investigated to better understand the dark current transport and electron-avalanche mechanisms of the devices and optimize the structures. The… read more here.
Keywords: planar mesa; avalanche; hgcdte; dark current ... See more keywords