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Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/1.5134105
Abstract: Silicon (Si) self-diffusivity in a Si nanopillar under dry oxidation was quantitatively evaluated by atom probe tomography of Si isotope heterostructure interfaces. Dry oxidation of a nanopillar with 200 nm diameter at 920 °C for 4 h revealed…
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Keywords:
enhanced self;
diffusion;
oxidation;
oxidation enhanced ... See more keywords