Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers
Sign Up to like & getrecommendations! Published in 2019 at "Optik"
DOI: 10.1016/j.ijleo.2019.162978
Abstract: Abstract High quality non-polar a -plane AlGaN epi-layers with dual MgN interlayers were successfully grown on semi-polar r -plane sapphire substrates with the indium-surfactant-assisted metal organic chemical vapor disposition (MOCVD) technology, and characterized with atomic… read more here.
Keywords: algan epi; quality; surface morphology; plane algan ... See more keywords
Properties of Si-doped a-plane AlGaN layers
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DOI: 10.1016/j.mssp.2020.105270
Abstract: Abstract The non-polar a-plane (11 2 ¯ 0) n-type AlGaN epi-layers with high electron concentration were successfully grown on r-plane (1 1 ¯ 02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction,… read more here.
Keywords: polar plane; non polar; plane algan; algan epi ... See more keywords
High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate
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DOI: 10.1021/acsphotonics.8b00283
Abstract: An internal quantum efficiency (IQE) as high as 39% was achieved with the nonpolar a-plane AlGaN-based multiple quantum wells (MQWs) grown on the r-plane sapphire substrate with metal organic chemical vapor deposition technology. Evident fourth… read more here.
Keywords: quantum; algan based; internal quantum; plane algan ... See more keywords