The mechanism of plastic deformation in intact and irradiated GaN during indentation: A molecular dynamics study
Sign Up to like & getrecommendations! Published in 2018 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2018.03.041
Abstract: Abstract A series of molecular dynamics simulations are carried out to study the mechanical properties of GaN. Firstly, indentation simulations are performed on the c-plane and m-plane GaN. Combined with the evolution of defects in… read more here.
Keywords: molecular dynamics; indentation; plane gan; deformation ... See more keywords
Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding m-, a- and c-Plane GaN Substrates
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c04959
Abstract: Anisotropic optical properties in m-, a- and c-plane GaN substrates are investigated with photoluminescence and Raman scattering spectroscopic techniques. At room temperature, the Raman light scatt... read more here.
Keywords: raman; optical properties; gan substrates; plane gan ... See more keywords
Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer
Sign Up to like & getrecommendations! Published in 2019 at "CrystEngComm"
DOI: 10.1039/c9ce00463g
Abstract: We have observed anisotropic mosaicity of an m-plane GaN homoepitaxial layer by X-ray diffraction topography imaging over a wafer and X-ray rocking curves measured at various wafer points. read more here.
Keywords: plane; gan homoepitaxial; plane gan; anisotropic mosaicity ... See more keywords
Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate
Sign Up to like & getrecommendations! Published in 2019 at "CrystEngComm"
DOI: 10.1039/c9ce00995g
Abstract: In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate. read more here.
Keywords: plane; plane gan; quality; sapphire substrate ... See more keywords
Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/abd76a
Abstract: We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5 × 1013 cm−2 to 5 × 1015 cm−2, the n-type… read more here.
Keywords: luminescence plane; structure luminescence; implantation; plane ... See more keywords
The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth
Sign Up to like & getrecommendations! Published in 2021 at "Coatings"
DOI: 10.3390/coatings11070824
Abstract: In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor… read more here.
Keywords: temperature; plane gan; epitaxial growth; ga2o3 substrates ... See more keywords
Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation
Sign Up to like & getrecommendations! Published in 2018 at "Nanomaterials"
DOI: 10.3390/nano8060397
Abstract: We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky… read more here.
Keywords: schottky diodes; plane gan; hvpe plane; nanodot formation ... See more keywords