Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell
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DOI: 10.1088/1361-6528/acc810
Abstract: The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an… read more here.
Keywords: plane inas; conductance; selective area; inas nanowires ... See more keywords