In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy
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DOI: 10.1088/1361-6528/ac45c5
Abstract: In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact… read more here.
Keywords: ingaas; plane ingaas; molecular beam; tunnel ... See more keywords