Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.02.012
Abstract: Abstract A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical… read more here.
Keywords: polar gan; grown plane; hillock; residual stress ... See more keywords
Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.03.015
Abstract: Abstract In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode… read more here.
Keywords: sapphire substrate; patterned sapphire; plane sapphire; sapphire ... See more keywords
Strain-stress study of AlxGa1−xN/AlN heterostructures on c-plane sapphire and related optical properties
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-46628-4
Abstract: This work presents a systematic study of stress and strain of AlxGa1−xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction… read more here.
Keywords: study; stress; alxga1 aln; composition ... See more keywords
How to distinguish between opposite faces of an a‐plane sapphire wafer
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Crystallography"
DOI: 10.1107/s1600576718001383
Abstract: A method to distinguish between two symmetrically equivalent opposite ð1120Þ and ð1120Þ faces of an a-plane sapphire wafer is described. It is shown that use of conventional X-ray diffraction analysis makes it possible to determine… read more here.
Keywords: distinguish opposite; sapphire; sapphire wafer; faces plane ... See more keywords
High-sensitivity β-Ga 2 O 3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate
Sign Up to like & getrecommendations! Published in 2017 at "Optical Materials Express"
DOI: 10.1364/ome.7.003643
Abstract: Recently, monoclinic Ga2O3 (β-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-plane sapphire substrates… read more here.
Keywords: high sensitivity; ga2o3; plane sapphire; substrate ... See more keywords
Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2020 at "Applied Sciences"
DOI: 10.3390/app10020639
Abstract: Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we… read more here.
Keywords: growth antimonene; antimonene plane; direct growth; molecular beam ... See more keywords
The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15238362
Abstract: β-Ga2O3 thin films grown on widely available c-plane sapphire substrates typically exhibit structural defects due to significant lattice and thermal expansion mismatch, which hinder the use of such films in electronic devices. In this work,… read more here.
Keywords: nucleation; plane sapphire; nucleation layer; ga2o3 thin ... See more keywords
The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate
Sign Up to like & getrecommendations! Published in 2022 at "Symmetry"
DOI: 10.3390/sym14030573
Abstract: In the present work, a single-crystalline epitaxial nonpolar a-plane AlN film with in-plane two-folder symmetries was successfully achieved on an r-plane sapphire substrate, by combining physical vapor deposition and a high-temperature annealing technique. Moreover, by… read more here.
Keywords: plane; plane sapphire; plane two; sapphire substrate ... See more keywords