Effects of O2 addition on in-plasma photo-assisted etching of Si with chlorine
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DOI: 10.1116/6.0000338
Abstract: Addition of oxygen was used to control the in-plasma photo-assisted etching (PAE) of p-type Si(100) and poly-Si in a high density, inductively coupled, Faraday-shielded, Ar/Cl2 (225/25 SCCM), 60 mTorr plasma. After etching, samples were transferred under vacuum… read more here.
Keywords: plasma photo; assisted etching; addition; photo assisted ... See more keywords