Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices
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DOI: 10.1021/acsomega.8b03260
Abstract: There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal–semiconductor–metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although… read more here.
Keywords: plasmoelectronic devices; nonalloyed ohmic; ohmic contacts; doped gaas ... See more keywords