Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors
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DOI: 10.1109/ted.2019.2897602
Abstract: Different source field plate (FP) connections are compared for the all-GaN integrated cascode device to address the capacitance matching and turn-off controllability issues reported in the conventional GaN plus Si cascode. The experimental results suggest… read more here.
Keywords: cascode; plate designs; field; source ... See more keywords