Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate
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DOI: 10.3390/ma16062462
Abstract: This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition… read more here.
Keywords: growth; plateau region; selective area; plateau patterned ... See more keywords