Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress
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DOI: 10.1186/s11671-017-1913-3
Abstract: Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450… read more here.
Keywords: germanium quantum; mobility; strained germanium; pmosfets soi ... See more keywords