MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3140157
Abstract: The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external… read more here.
Keywords: pmtj; stt mram; design; mtj model ... See more keywords