Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET
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DOI: 10.3390/mi14020301
Abstract: In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We… read more here.
Keywords: drain side; fet; barrier width; pnpn tunnel ... See more keywords