Effect of Ba(Mg1/3Nb2/3)O3 buffer layer on electrical properties of PZT-based films
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DOI: 10.1007/s10854-020-03538-w
Abstract: Pb[Nbx(Zr0.52Ti0.48)1−x]O3 (PNZT) thin films were deposited on Pt/Ti/SiO2/Si(100) by the sol–gel method using Ba(Mg1/3Nb2/3)O3 (BMN) buffer layer. The effects of Nb doping and BMN buffer layer on fatigue endurance and ferroelectric properties of PZT thin… read more here.
Keywords: bmn; buffer layer; pnzt; film ... See more keywords