A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Science"
DOI: 10.1002/advs.201900024
Abstract: Abstract Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak… read more here.
Keywords: ordered nanodots; memory; leakage; selector ... See more keywords
Space-Time-Efficient Modeling of Large-Scale 3-D Cross-Point Memory Arrays by Operation Adaption and Network Compaction
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3123591
Abstract: Three-dimensional (3-D) integrated cross-point memory arrays can be used to build high-density storage-class memory systems. However, the coupled network topology caused by sharing word lines or bit lines between adjacent memory layers significantly enlarges the… read more here.
Keywords: operation; memory arrays; point memory; memory ... See more keywords