Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
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DOI: 10.1126/sciadv.abo6408
Abstract: N-polar aluminum nitride (AlN) is an important building block for next-generation high-power radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct… read more here.
Keywords: aluminum; molecular beam; aln; polar aln ... See more keywords