Growth of high purity N-polar (In,Ga)N films
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DOI: 10.1016/j.jcrysgro.2016.11.039
Abstract: Abstract In this work, secondary ion mass spectroscopy was used to study carbon and oxygen impurity incorporation in N-polar [000–1] GaN films grown by MOCVD. The effects of growth temperature, V/III ratio, and precursor flows… read more here.
Keywords: oxygen; growth high; purity polar; polar films ... See more keywords