Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.02.012
Abstract: Abstract A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical… read more here.
Keywords: polar gan; grown plane; hillock; residual stress ... See more keywords
Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b01549
Abstract: Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O3) treatment of the GaN surface… read more here.
Keywords: polar gan; band bending; treatment; band ... See more keywords
High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2020 at "RSC Advances"
DOI: 10.1039/d0ra07856e
Abstract: N-polar GaN films (C, D, E, F) grown with varied V/III ratio show improved crystallinity and reduced impurity concentrations. read more here.
Keywords: polar gan; varied iii; grown varied; films grown ... See more keywords
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0058587
Abstract: The advantage of GaN is the capability of producing amplifiers with high output power and efficiency. At microwave frequencies, this performance has been achieved; however, when transitioning device design into mm-wave frequencies, the output power… read more here.
Keywords: linearity; polar gan; power; output power ... See more keywords
Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab08bf
Abstract: A two-step approach has been developed for the growth of semi-polar (11–22) GaN on patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a high temperature, one of the most challenging issues. A… read more here.
Keywords: polar gan; two step; semi polar; 113 silicon ... See more keywords
A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab4f16
Abstract: We report upon the microwave plasma chemical vapor deposition (MPCVD) growth of polycrystalline diamond on varying crystallographic orientations of GaN (Ga-polar and N-polar), as well as on Si3N4-coated N-polar GaN, as applied to top-side heat… read more here.
Keywords: si3n4 coated; polar gan; diamond films; mpcvd growth ... See more keywords
Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/7/074001
Abstract: An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance… read more here.
Keywords: polar gan; parameter extraction; mode polar; small signal ... See more keywords
Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the “Green Gap” Range
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3204668
Abstract: The low luminous efficiency of indium gallium nitride (InGaN) light-emitting diodes (LED) in the “green gap” range has been a long unsettled issue confounding the researchers. One of the main obstacles comes from the intrinsic… read more here.
Keywords: polar gan; efficiency; green gap; gap range ... See more keywords
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3022401
Abstract: This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been the substrate of choice to achieve the highest level… read more here.
Keywords: polar gan; recess hemts; deep recess; sapphire ... See more keywords
6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2021.3067228
Abstract: This letter reports on the $W$ -band power performance of N-polar GaN deep recess MIS–high electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium (Ru) gate metallization process. The deep recess structure… read more here.
Keywords: tex math; polar gan; deep recess; inline formula ... See more keywords
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15093005
Abstract: High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a… read more here.
Keywords: without intentional; polar gan; sapphire substrate;