SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy
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DOI: 10.1038/s41598-020-68963-7
Abstract: Contactless electroreflectance studies coupled with numerical calculations are performed on in-situ SiNx capped N-polar III-nitride high electron mobility transistor (HEMT) structures with a scaled channel thickness in order to analyse the built-in electric field in… read more here.
Keywords: iii nitride; channel thickness; spectroscopy; polar iii ... See more keywords