A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep45082
Abstract: Based on carrier rate equation, a new model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN multi-quantum-well structures. From the study of TRPL curves at different… read more here.
Keywords: quantum; ingan gan; resolved photoluminescence; polar ingan ... See more keywords
Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5008720
Abstract: Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates… read more here.
Keywords: non polar; polar ingan; highly polarized; ingan quantum ... See more keywords
Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad22fc
Abstract: Semi-polar orientation owns the advantage of reduced internal piezoelectric fields by tilting the growth direction away from the conventional c-direction. The crystal symmetry and the balanced biaxial stress in growth plane are inevitably broken in… read more here.
Keywords: structural optical; polar ingan; semi polar; properties semi ... See more keywords