Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN
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DOI: 10.1063/1.5009904
Abstract: N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and… read more here.
Keywords: direction; inn; quantum dot; step direction ... See more keywords
In-polar InN growth diagram by MOVPE
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DOI: 10.1063/5.0283556
Abstract: The structural properties of wurtzite (WZ) In-polar InN layers grown by metal-organic vapor phase epitaxy (MOVPE) on GaN (0001) templates were systematically studied by varying the growth temperature (380–565 °C) and pressure (600–1500 hPa). WZ-phase InN layers… read more here.
Keywords: temperature; polar inn; inn; movpe ... See more keywords