Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN
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DOI: 10.1063/1.5009904
Abstract: N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and… read more here.
Keywords: direction; inn; quantum dot; step direction ... See more keywords