Properties of Si-doped a-plane AlGaN layers
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DOI: 10.1016/j.mssp.2020.105270
Abstract: Abstract The non-polar a-plane (11 2 ¯ 0) n-type AlGaN epi-layers with high electron concentration were successfully grown on r-plane (1 1 ¯ 02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction,… read more here.
Keywords: polar plane; non polar; plane algan; algan epi ... See more keywords