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Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150734
Abstract: Abstract Detailed comparison of optical quality of GaN layers grown homoepitaxially on bulk Ga-polar and N-polar substrates by plasma-assisted molecular beam epitaxy was performed. One order of magnitude lower photoluminescence (PL) intensity and decay time…
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Keywords:
vacancy related;
nitrogen vacancy;
layers grown;
polar substrates ... See more keywords