Polarimetric photoluminescence microscope for strain imaging on semiconductor devices.
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DOI: 10.1364/ao.449825
Abstract: Anisotropic strain induces a partial linear polarization of the photo-luminescence (PL) emitted by cubic semiconductor crystals such as GaAs or InP. This paper thus presents a polarimetric PL microscope dedicated to the characterization of semiconductor… read more here.
Keywords: linear polarization; anisotropic strain; semiconductor devices; microscope ... See more keywords