Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes
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DOI: 10.1002/adfm.202001283
Abstract: Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen‐polarity GaN films on transferred graphene… read more here.
Keywords: polarity gan; gan films; nitrogen; light emitting ... See more keywords