Polarization Doping in a GaN-InN System—Ab Initio Simulation
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16031227
Abstract: Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging… read more here.
Keywords: inn system; polarization doping; polarization; gan inn ... See more keywords
Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Optics Letters"
DOI: 10.3788/col202119.121404
Abstract: Absorption induced by activated magnesium (Mg) in a p-type layer contributes considerable optical internal loss in GaN-based laser diodes (LDs). An LD structure with a distributed polarization doping (DPD) p-cladding layer (CL) without intentional Mg… read more here.
Keywords: gan based; current density; polarization doping; layer ... See more keywords