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Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900554
Abstract: The negative capacitance (NC) effect in ferroelectric materials provides a possible solution to break the Boltzmann tyranny and realize steep‐slope field‐effect transistors (FETs) with sub‐60 mV dec−1 subthreshold slope (SS). HfO2‐based ferroelectrics (FE) have attracted…
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Keywords:
thin films;
polarization;
landscape;
hfxzr1 xo2 ... See more keywords
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Published in 2017 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b02099
Abstract: Displacement-vs-electric field hysteresis (D–E) loops constructed on the Saywer–Tower circuit have been widely utilized to characterize the ferroelectric performance of ferroelectric materials. To overcome the disadvantages of the current Sawyer–Tower (ST) circuit in overestimated polarization…
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Keywords:
tower circuit;
polarization;
relaxation processes;
circuit ... See more keywords