Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
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DOI: 10.3938/jkps.76.1127
Abstract: For achieving a highly selective polishing rate between a tungsten (W) film and a silicon-dioxide (SiO 2 ) film in W chemical-mechanical planarization (CMP), we designed W-film CMP slurry by mixing a small-molecule having two… read more here.
Keywords: tungsten film; malic acid; polishing rate; film ... See more keywords