Low-damage etching of poly-Si and SiO2 via a low-energy electron beam in inductively coupled CF4 plasma
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DOI: 10.1088/1361-6595/ad8217
Abstract: Electron-assisted etching of poly-Si and SiO2 is performed via a grid system in inductively coupled CF4 plasma. The feasibility of electron-assisted etching is discussed with a focus on the low-surface damage of the etching. The… read more here.
Keywords: electron beam; etching poly; poly sio2; electron ... See more keywords