Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
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DOI: 10.1002/adem.202000901
Abstract: The effect of electro‐thermal stress on the electrical performance of flexible, low‐temperature polysilicon (LTPS) thin‐film transistors (TFTs) after mechanical‐folding stress aiming to improve the reliability of foldable display backplanes is studied (IG). Herein, for the… read more here.
Keywords: film transistor; stress; thin film; folding stress ... See more keywords
Synergy effect of microwave annealing and high-pressure hydrogen annealing on Poly-Si thin-film transistor
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DOI: 10.1088/1361-6528/ac800c
Abstract: Grain boundary (GB) is a significant factor that deteriorates the transfer characteristics of poly-Si thin-film transistors (TFTs). In this study, we utilized the synergistic effect of microwave annealing (MWA) and high-pressure hydrogen annealing (HPHA) to… read more here.
Keywords: poly thin; thin film; effect; microwave annealing ... See more keywords
Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer
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DOI: 10.3390/nano12173063
Abstract: We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed… read more here.
Keywords: double layer; electric double; thin film; schottky barrier ... See more keywords