Fracture of solar-grade anisotropic polycrystalline Silicon: A combined phase field–cohesive zone model approach
Sign Up to like & getrecommendations! Published in 2018 at "Computer Methods in Applied Mechanics and Engineering"
DOI: 10.1016/j.cma.2017.10.021
Abstract: Abstract This work presents a novel computational framework to simulate fracture events in brittle anisotropic polycrystalline materials at the microscopical level, with application to solar-grade polycrystalline Silicon. Quasi-static failure is modeled by combining the phase… read more here.
Keywords: fracture; solar grade; polycrystalline; model ... See more keywords
A first passage based model for probabilistic fracture of polycrystalline silicon MEMS structures
Sign Up to like & getrecommendations! Published in 2017 at "Journal of The Mechanics and Physics of Solids"
DOI: 10.1016/j.jmps.2016.11.007
Abstract: Experiments have shown that the failure loads of Microelectromechanical Systems (MEMS) devices usually exhibit a considerable level of variability, which is believed to be caused by the random material strength and the geometry-induced random stress… read more here.
Keywords: strength; mems structures; poly mems; model ... See more keywords
Selective phosphorus doping of polycrystalline silicon on glass using self-assembled monolayer doping (MLD) and flash anneal
Sign Up to like & getrecommendations! Published in 2021 at "Materials Letters"
DOI: 10.1016/j.matlet.2021.130780
Abstract: Abstract We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was… read more here.
Keywords: phosphorus; silicon glass; monolayer; silicon ... See more keywords
Impacts of temperature and irradiance on polycrystalline silicon solar cells parameters
Sign Up to like & getrecommendations! Published in 2018 at "Solar Energy"
DOI: 10.1016/j.solener.2018.09.051
Abstract: Abstract The accurate knowledge of the solar cells parameters dependence on irradiance and temperature is of vital importance for the performance assessment of photovoltaic modules and development of new devices, and many works have been… read more here.
Keywords: irradiance; solar cells; silicon solar; temperature irradiance ... See more keywords
In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.107981
Abstract: Abstract A polycrystalline silicon vertical thin film transistor (VTFT) is fabricated, and the electrical parameters are extracted and compared with the typical lateral thin film transistor (LTFT). The similar subthreshold slope and the distinct field… read more here.
Keywords: thin film; vertical thin; silicon vertical; film ... See more keywords
Influence of hydrogen dilution and doping gas on the material properties of plasma-deposited polycrystalline silicon thin films
Sign Up to like & getrecommendations! Published in 2020 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2020.138220
Abstract: Abstract We studied the effects of precursor gas composition and the addition of dopant gas, PH3, on polycrystalline silicon films deposited using plasma-enhanced chemical vapor deposition. Spectroscopic ellipsometry measurement and modeling results revealed that the… read more here.
Keywords: poly films; gas; hydrogen dilution; dopant gas ... See more keywords
Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.6b14525
Abstract: The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution… read more here.
Keywords: long term; stress; term mechanical; film ... See more keywords
Efficient polycrystalline silicon solar cells with double metal oxide layers.
Sign Up to like & getrecommendations! Published in 2019 at "Dalton transactions"
DOI: 10.1039/c8dt04233k
Abstract: Crystalline silicon solar cells can achieve high power conversion efficiency and can be successfully commercialized; however, the exploration of optimization strategies is still necessary. Here, we demonstrated improved performance of a polycrystalline silicon solar cell… read more here.
Keywords: oxide layers; solar cells; metal oxide; silicon solar ... See more keywords
Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4986924
Abstract: In the pursuit of ever higher conversion efficiencies for silicon photovoltaic cells, polycrystalline silicon (poly-Si) layers on thin silicon oxide films were shown to form excellent carrier-selective junctions on crystalline silicon substrates. Investigating the pinhole… read more here.
Keywords: microscopy; silicon oxide; selective junctions; carrier selective ... See more keywords
Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3068987
Abstract: In this work, a capacitorless one-transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) metal–oxide–semiconductor field-effect transistor was designed and analyzed through a technology computer-aided design (TCAD) simulation. A poly-Si thin film… read more here.
Keywords: tex math; dram; grain boundaries; inline formula ... See more keywords
Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors
Sign Up to like & getrecommendations! Published in 2017 at "Modern Physics Letters B"
DOI: 10.1142/s0217984917400073
Abstract: Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of… read more here.
Keywords: silicon thin; mobility; type polycrystalline; thin film ... See more keywords