A comprehensive semi-analytical model of the polysilicon emitter contact in bipolar transistors
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-1082-8
Abstract: This paper aims to develop a comprehensive physical model for a bipolar transistor’s polysilicon-contacted emitter. Poisson’s equation is solved numerically in the emitter–base space charge region to specify the boundary conditions and the excess minority… read more here.
Keywords: analytical model; semi analytical; polysilicon; model ... See more keywords
Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells
Sign Up to like & getrecommendations! Published in 2017 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2017.11.004
Abstract: Abstract This paper presents direct experimental evidence for the strong impurity gettering effects associated with the formation of both phosphorus and boron doped polysilicon/oxide passivating contacts for silicon solar cells, doped via thermal diffusion from… read more here.
Keywords: phosphorus boron; passivating contacts; polysilicon; impurity gettering ... See more keywords
Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2019.110256
Abstract: Abstract In this work, we investigated the gettering of the in-situ phosphorus-doped polysilicon passivating contact that was realized through plasma-enhanced chemical-vapor deposition (PECVD) technology. Interstitial iron (Fei) induced artificially was used as the marker for… read more here.
Keywords: phosphorus doped; doped polysilicon; polysilicon; passivating contact ... See more keywords
Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells
Sign Up to like & getrecommendations! Published in 2021 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2021.111229
Abstract: Abstract The use of Ga-doped Czochralski (CZ) silicon wafers in Passivated Emitter and Rear Cells (PERC) has been confirmed to have a prominent advantage in suppressing light-induced degradation (LID), which will attract considerable attention for… read more here.
Keywords: polysilicon passivating; solar cells; type polysilicon; doped wafers ... See more keywords
A Detailed Examination of Polysilicon Resistivity Incorporating the Grain Size Distribution
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3530865
Abstract: Current transport in polysilicon is a complicated process with many factors to consider. The inhomogeneous nature of polysilicon with its differently shaped and sized grains is one such consideration. We have developed a method that… read more here.
Keywords: size distribution; polysilicon; resistivity; grain size ... See more keywords
An All-in-One Testing Chip for the Simultaneous Measurement of Multiple Thermoelectric Parameters in Doped Polysilicon
Sign Up to like & getrecommendations! Published in 2025 at "Micromachines"
DOI: 10.3390/mi16020116
Abstract: Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters—such as the Seebeck coefficient, thermal conductivity, and electrical resistivity—of polysilicon with… read more here.
Keywords: one testing; polysilicon; testing chip; measurement ... See more keywords