Temperature Dependent Reliability of Polysilicon Emitter Bipolar Transistors Under High Current Stress
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DOI: 10.1109/tdmr.2020.3006982
Abstract: Temperature dependent high forward current stress induced drift of electrical parameters (current gain ( ${\beta }$ ) variations, emitter resistance (R $_{E}$ ) decrease) in polysilicon emitter bipolar transistors has been revealed. It shows that… read more here.
Keywords: temperature; current stress; polysilicon emitter; emitter bipolar ... See more keywords