Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
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DOI: 10.1016/j.microrel.2019.113488
Abstract: Abstract In this paper, we present a comprehensive analysis of the charge trapping mechanisms that affect the GaN based vertical Fin FETs when the devices are submitted to positive gate bias. Devices with higher channel… read more here.
Keywords: gate bias; trapping mechanisms; charge trapping; gate ... See more keywords