Performance Assessment of the Charge-Plasma-Based Cylindrical GAA Vertical Nanowire TFET With Impact of Interface Trap Charges
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DOI: 10.1109/ted.2019.2935342
Abstract: In this article, a charge-plasma (CP)-based gate-all-around (GAA) silicon vertical nanowire tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges (ITCs) on dopingless (DL) NW-based device have been addressed for the first… read more here.
Keywords: plasma based; performance; positive itcs; charge plasma ... See more keywords