Positive shift in corrole redox potentials leveraged by modest β-CF3-substitution helps achieve efficient photocatalytic C-H bond functionalization by group 13 complexes.
Sign Up to like & getrecommendations! Published in 2019 at "Dalton transactions"
DOI: 10.1039/c9dt02150g
Abstract: Tris- and tetrakis-β-trifluoromethylated gallium (3CF3-Ga, 4CF3-Ga) and aluminum (3CF3-Al, 4CF3-Al) corrole systems were synthesized by a facile "one-pot" approach from the respective tri- and tetra-iodo starting compounds using the FSO2CF2CO2Me reagent. The isolated 5,10,15-(tris-pentafluorophenyl)corrole-based compounds… read more here.
Keywords: cf3; group; substitution; positive shift ... See more keywords
Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0038705
Abstract: In this work, a layer of graphene is inserted into Al2O3/recessed gate AlGaN/GaN structures to realize the positive shift of flatband voltage VFB. With a chemically inert surface and a high work function, graphene suppresses… read more here.
Keywords: gan structures; recessed gate; algan gan; gate ... See more keywords
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2712782
Abstract: AlGaN/GaN HEMTs with two kinds of p-type metal-oxide (CuO and NiOx) gates have been fabricated, in which the threshold voltage can be modulated effectively. Especially, the threshold voltage of the device shows a 0.7 V… read more here.
Keywords: voltage; gan hemts; algan gan; threshold voltage ... See more keywords