Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
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DOI: 10.1063/5.0029691
Abstract: The wake-up in doped hafnia ferroelectric devices is an extremely important process to understand in order to integrate these materials successfully into working ferroelectric memory devices. The crystallographic origins of this process are clarified with… read more here.
Keywords: crystallographic origins; hafnia; possible crystallographic; elucidating possible ... See more keywords