Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110501
Abstract: Abstract By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300- ∘ C) annealing plays… read more here.
Keywords: gaas substrates; gaas; post bonding; sacrificial layer ... See more keywords
Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding
Sign Up to like & getrecommendations! Published in 2025 at "Micromachines"
DOI: 10.3390/mi16121304
Abstract: To address the challenge of characterizing bonding strength in hybrid bonding, this paper proposes a method based on post-bonding crack-induced di-cantilever bending (PBC-DCB). The commonly used industrial blade insertion (BI) method only measures the edge… read more here.
Keywords: wafer; hybrid bonding; strength wafer; bonding strength ... See more keywords