Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00559-2
Abstract: In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping… read more here.
Keywords: iii; potential based; gate around; center potential ... See more keywords
Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.05.012
Abstract: Abstract We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge… read more here.
Keywords: modeling charge; charge; based modeling; model ... See more keywords
Decay Processes in Cationic Alkali Metals in Microsolvated Clusters: A Complex Absorbing Potential Based Equation-of-Motion Coupled Cluster Investigation.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of chemical theory and computation"
DOI: 10.1021/acs.jctc.1c01036
Abstract: We have employed the highly accurate complex absorbing potential based ionization potential equation-of-motion coupled cluster singles and doubles (CAP-IP-EOM-CCSD) method to study the various intermolecular decay processes in ionized metals (Li+, Na+, K+) microsolvated by… read more here.
Keywords: potential based; absorbing potential; decay processes; equation motion ... See more keywords
Constrained Density Functional Theory: A Potential-Based Self-Consistency Approach
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Chemical Theory and Computation"
DOI: 10.1021/acs.jctc.2c00673
Abstract: Chemical reactions, charge transfer reactions, and magnetic materials are notoriously difficult to describe within Kohn–Sham density functional theory, which is strictly a ground-state technique. However, over the last few decades, an approximate method known as… read more here.
Keywords: theory; potential based; functional theory; constrained density ... See more keywords
Chemical-potential-based lattice Boltzmann method for nonideal fluids.
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review E"
DOI: 10.1103/physreve.95.063305
Abstract: Chemical potential, as an important thermodynamic quantity, has been popularly used in thermodynamic modeling for complex systems, especially for those involving the phase transitions and chemical reactions. Here we present a chemical-potential-based multiphase lattice Boltzmann… read more here.
Keywords: lattice boltzmann; chemical potential; potential based;
A Surface-Potential-Based DC Model of Amorphous Oxide Semiconductor TFTs Including Degeneration
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2639042
Abstract: In this letter, for both non-degenerate conduction and degenerate conduction, a new compact model of amorphous oxide semiconductor thin-film transistors is developed. The contributions of the trapped and free charges are considered in the closed-form… read more here.
Keywords: amorphous oxide; oxide semiconductor; potential based; surface potential ... See more keywords
Solving the spike feature information vanishing problem in spiking deep Q network with potential based normalization
Sign Up to like & getrecommendations! Published in 2022 at "Frontiers in Neuroscience"
DOI: 10.3389/fnins.2022.953368
Abstract: Brain-inspired spiking neural networks (SNNs) are successfully applied to many pattern recognition domains. The SNNs-based deep structure has achieved considerable results in perceptual tasks, such as image classification and target detection. However, applying deep SNNs… read more here.
Keywords: problem; spiking deep; potential based; deep networks ... See more keywords
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
Sign Up to like & getrecommendations! Published in 2021 at "Micromachines"
DOI: 10.3390/mi12020199
Abstract: We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended… read more here.
Keywords: modeling gan; gan gate; compact modeling; potential based ... See more keywords