Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
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DOI: 10.1038/s41467-020-15753-4
Abstract: Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In… read more here.
Keywords: stack; metal; internal potential; multiple domain ... See more keywords