Resistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation Under the BOX
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DOI: 10.1109/tdmr.2018.2873220
Abstract: Silicon-on-insulator (SOI) technology has been considered capable of developing devices with high tolerance against soft errors. In addition, with a thin buried oxide (BOX) layer, reduction in power consumption can be further achieved by applying… read more here.
Keywords: caused radiation; potential perturbation; box; soft errors ... See more keywords