Application of Empirical Si–O–C Potential to Simulate Amorphous Atomic Structures and Transition Layers by the Bond Switching Method
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DOI: 10.1134/s1063774519040059
Abstract: The parameters of REBO2 empirical potential for the Si–O–C system are presented. The results of the calculations using this potential agree well with the experimental values of the lengths and angles of unit cells, bond… read more here.
Keywords: empirical potential; application empirical; potential simulate; bond switching ... See more keywords