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Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113412
Abstract: Abstract This paper describes the design of a power-cycling test bench to study the reliability of power-GaN-HEMT power switches. The aim of the presented paper is to study the measurable electrical consequences of internal degradation…
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Keywords:
degradation;
power;
power cycling;
degradation indicators ... See more keywords
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Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114282
Abstract: Abstract A three-phase half-bridge insulated gate bipolar transistor (IGBT) module is designed and prototyped as the assembly of heat sink-substrate-post-chip-substrate-heat sink to realize high power density and good thermal performance for electric and hybrid electric…
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Keywords:
microscopy;
power cycling;
double side;
power ... See more keywords
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Published in 2021 at "Scientific reports"
DOI: 10.1038/s41598-021-84976-2
Abstract: Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ([Formula: see text]) and the…
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Keywords:
see text;
formula see;
stress;
power cycling ... See more keywords
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Published in 2022 at "Medicine"
DOI: 10.1097/md.0000000000031841
Abstract: Background: Knee osteoarthritis (KOA) is a chronic musculoskeletal disease affecting the entire joint. Exercise therapy is the core treatment plan for non-surgical treatment of KOA, and tele-rehabilitation is also applied to KOA, but there is…
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Keywords:
function;
trial;
power cycling;
pain ... See more keywords
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Published in 2018 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2018.2825386
Abstract: 13.5 mm ${\times }\,\,$ 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepared at 250 °C and a pressure of 10 MPa for 5 min and compared with Pb5Sn solder joint…
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Keywords:
sintered nano;
die attachments;
power;
power cycling ... See more keywords
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Published in 2019 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2019.2895695
Abstract: The study presented in this paper contributes to the quantification of the correlations between resistance degradation and Al metallization layer reconstruction observed in high-power insulated gate bipolar transistor (IGBT) modules during power cycling. The microstructure…
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Keywords:
metallization layer;
metallization;
power cycling;
resistance ... See more keywords
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Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3018535
Abstract: One way to achieve the best in class reliability is the implementation of a design for reliability methodology into the design process in order to estimate the lifetime of each individual critical component, based on…
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Keywords:
methodology;
power cycling;
active power;
power ... See more keywords