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Published in 2020 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.32644
Abstract: This paper presents a broadband linearizer based on equivalent power‐dependent impedance function (PDIF) of diode and load match network (LMN). A method to measure the PDIF is proposed, then the broadband LMN can be synthesized…
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Keywords:
based equivalent;
broadband linearizer;
linearizer based;
equivalent power ... See more keywords
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Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.09.184
Abstract: Abstract Multicolor tunable upconversion luminescence materials could be applied to polychromatic LED and anti-counterfeit due to their superiority in abundant color and security feature. However, the harsh terms to achieve emission tuning associated with the…
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Keywords:
multicolor tunable;
power;
lower power;
upconversion ... See more keywords
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Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra00027h
Abstract: Two-dimensional (2D) free-standing Ge-doped ZnO nanostructures were synthesized on graphite substrate. A single nanosheet composed of amounts of nanograins with size of ∼20 nm exhibits excellent field electron emission capability that can deliver a current…
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Keywords:
free standing;
power dependent;
electron;
standing doped ... See more keywords
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Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0250118
Abstract: Power-dependent Raman spectroscopy has been regularly used in material science, especially in low-dimensional materials. The origin of Raman mode frequency changes with increased laser power has not yet been generalized. So far, the phonon mode…
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Keywords:
spectroscopy;
dependent raman;
raman spectroscopy;
power dependent ... See more keywords
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Published in 2017 at "NANO"
DOI: 10.1142/s1793292017500862
Abstract: In most of the reports on nanocrystal (NC) luminescent, the power depedence of luminescent intensity is studied using a continuous-wave laser with low power density, and the slopes of those differe...
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Keywords:
power dependent;
nagdf4 nagdf4;
property nagdf4;
power ... See more keywords
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Published in 2025 at "Journal of Electromagnetic Engineering and Science"
DOI: 10.26866/jees.2025.3.r.294
Abstract: This study improved the accuracy of the large-signal model of a high-power gallium nitride (GaN) high electron mobility transistor (HEMT) by using power-dependent constant and tapered thermal resistance methods. The findings indicate that the channel…
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Keywords:
thermal resistance;
power dependent;
large signal;
power ... See more keywords