Ag@Sn Core‐Shell Powder Preform with a High Re‐Melting Temperature for High‐Temperature Power Devices Packaging
Sign Up to like & getrecommendations! Published in 2018 at "Advanced Engineering Materials"
DOI: 10.1002/adem.201700524
Abstract: In this paper, the authors propose a highly conductive die attach material based on Ag@Sn powder for power devices operating at high temperatures or in other harsh environments. The preform can be reflowed at 250 °C… read more here.
Keywords: power devices; melting temperature; temperature; powder ... See more keywords
Velocity Profile based Evaluation and Improvement of Lifetime of Power Devices in Railway Propulsion Inverters
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2021.3076788
Abstract: In the work reported in this paper, the converter-level lifetime evaluation of power devices in a railway propulsion inverter is performed to assess and compare operating strategies of a railway vehicle in terms of reliability.… read more here.
Keywords: power devices; devices railway; propulsion; velocity ... See more keywords
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2653759
Abstract: We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and… read more here.
Keywords: bandgap semiconductors; power devices; extreme bandgap; wide extreme ... See more keywords
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2773201
Abstract: (Al)GaN recess-free normally OFF technology is developed for fabrication of high-yield lateral GaN-based power devices. The recess-free process is achieved by an ultrathin-barrier (UTB) AlGaN/GaN heterostructure that features a natural pinched-off 2-D electron gas channel.… read more here.
Keywords: power devices; barrier; recess free; algan gan ... See more keywords
Material Limit of Power Devices—Applied to Asymmetric 2-D Superjunction MOSFET
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2839180
Abstract: In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET’s specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are… read more here.
Keywords: power devices; superjunction mosfet; limit power; material limit ... See more keywords
Numerical Solutions for Electric Field Lines and Breakdown Voltages in Superjunction-Like Power Devices
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3007598
Abstract: An accurate method for the evaluation of breakdown voltages (BVs) in the superjunction-like (SJ-like) power devices is presented. This brief investigates the conventional SJ (c-SJ), the insulator pillar SJ (I-SJ), and the high-permittivity ( $\text{H}{k}$… read more here.
Keywords: electric field; power devices; like power; breakdown voltages ... See more keywords
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3013238
Abstract: The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive passivation layer on top is presented in this work. The junction termination… read more here.
Keywords: area power; passivation; power devices; large area ... See more keywords
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3083239
Abstract: Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive… read more here.
Keywords: power devices; fabrication; power; gan power ... See more keywords
Health State Estimation and Remaining Useful Life Prediction of Power Devices Subject to Noisy and Aperiodic Condition Monitoring
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Instrumentation and Measurement"
DOI: 10.1109/tim.2021.3054429
Abstract: Condition monitoring of power devices is highly critical for safety and mission-critical power electronics systems. Typically, these systems are subjected to noise in harsh operational environment contaminating the degradation measurements. In dynamic applications, the system… read more here.
Keywords: power devices; health; power; condition monitoring ... See more keywords
An Unequally Spaced Multi-Tone Load–Pull Characterization Technique for Simultaneous Linearity and Efficiency Assessment of RF Power Devices
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2019.2918799
Abstract: This paper presents an innovative experimental method for microwave power devices linearity characterization, based on a carefully designed multi-tone signal. Measurements working deeper into the understanding of in-band (IB) signal-to-noise characterization of nonlinear devices are… read more here.
Keywords: multi tone; power devices; characterization; linearity ... See more keywords
3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2017.2782226
Abstract: This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices are designed for wire bonding. Wire bonds have an inherent parasitic inductance that limits… read more here.
Keywords: wire bondless; power devices; wire; power ... See more keywords