Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2684093
Abstract: Simulations of reverse breakdown behavior of GaN power diodes with junction termination extensions (JTEs) are presented. The p-type JTE is located at the edge of the main p-n-junction, and under reverse bias, the charge in… read more here.
Keywords: gan power; junction termination; power diodes; jte ... See more keywords
Improvement of AlN Material Quality by High-Temperature Annealing Toward Power Diodes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2991397
Abstract: AlN devices have the potential to outperform current GaN devices, especially in the high-voltage region, thanks to AlN’s larger critical electric field and thermal conductivity. In order for the AlN-based power diodes to be realized… read more here.
Keywords: quality; aln; power diodes; power ... See more keywords