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Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2903209
Abstract: To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18- $ {\mu }\text{m}$ 1.8-V/3.3-V CMOS process. Since…
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Keywords:
protection;
protection design;
power domains;
esd protection ... See more keywords